side look package npn photodetector MID-11422 description package dimensions the MID-11422 is a npn silicon phototransistor moun- ted in a lensed ,water clear plastic and side looking package. features l wide range of collector current l lensed for high sensitivity l clear transparent package l low cost plastic package absolute maximum ratings @ t a =25 o c parameter maximum rating unit power dissipation 100 mw collector-emitter voltage 30 v emitter-collector voltage 5 v operating temperature range -55 o c to +100 o c storage temperature range -55 o c to +100 o c lead soldering temperature 260 o c for 5 seconds 02/04/2002 unity opto technology co., ltd. unit : mm ( inches ) notes : 1. tolerance is 0.25mm (.010") unless otherwise noted . 2. protruded resin under flange is 1.5 mm (.059") max 3. lead spacing is measured where the leads emerge from the package. 1.00 min. (.040) 2.54 (.100) 0.50 typ. (.020) 1.550.12 (.061 .005) 1.220.07 (.048 .003) 2.22 (.087) 0.76 (.030) c e 5.720.12 (.225.005) 12.70 min. (.500) 4.450.12 (.175.005)
MID-11422 optical-electrical characteristics @ t a =25 o c parameter test conditions symbol min. typ . max. unit collector-emitter ie=0.1ma breakdown voltage ee=0 emitter-collector ie =0.1ma breakdown voltage ee=0 collector-emitter i c =0.5 ma saturation voltage ee=0.1mw/cm 2 rise time v r =30v , 0=1k w tr 15 fall time i c =1ma tf 15 collector dark v ce =10v current ee=0mw/cm 2 on state collector v ce =5v current ee=0.1mw/cm 2 typical optical-electrical characteristic curves 02/04/2002 v (br)ceo v v 30 5 v (br)eco v ce(sat) 0.4 v na 100 m s ma i ceo 0.256 i c(on) 0 40 80 120 160 200 0 2 4 6 8 10 unity opto technology co., ltd. 0.001 0.01 0.1 1 10 100 1000 0 40 80 120 t a - ambient temperature - o c fig.1 collector dark current vs ambient temperature 0 1 2 3 4 5 0 1 2 3 4 5 6 ee - irradiance - mw/cm 2 fig.4 relative collector current vs irradiance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -75 -25 25 75 125 t a - ambient temperature - o c fig.2 normalized collector current vs ambient temperature r l - load resistance - k w fig.3 rise and fall time vs load resistance i c normalized collector current tr tf rise and fall time - m s iceo-collector dark current- m a relative collector current relative sensitivity 1.0 0.9 0.8 0 10 20 0.5 0.3 0.1 0.2 0.4 0.6 fig.5 sensitivity diagram vce =5 v ee =0.1 mw/cm 2 @ l = 940 nm vce = 5 v vcc = 5 v v rl = 1 v f = 100 hz pw = 1 ms 30 90 70 60 50 80 40
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